irfr210a.pdf datasheet:

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 1.169 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V200oContinuous Drain Current (TC=25 C) 2.7IDAContinuous Drain Current (TC=100 o )C 1.7IDM Drain Current-Pulsed 10 A1O_ VGS Gate-to-Source VoltageVEAS Single Pulsed Avalanche Energy 244 mJOIAR Avalanche Current 2.7 A1OEAR Repetitive Avalanche Energy 1 2.6 mJO3dv/dt Peak Diode Recovery dv/dt 5.0 V/ns OTotal Power Dissipation (TA=25 oC)*2.5 WPD Total Power Dissipation (TC=25 o )C 26 WoLi