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irfr210b irfu210b 2.pdf datasheet:

irfr210b_irfu210b_2irfr210b_irfu210b_2

November 2001IRFR210B / IRFU210B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters foruninterrupted power supply and motor control.DD

 

Keywords - ALL TRANSISTORS DATASHEET

 irfr210b irfu210b 2.pdf Design, MOSFET, Power

 irfr210b irfu210b 2.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfr210b irfu210b 2.pdf Database, Innovation, IC, Electricity

 

 
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