irfr214a.pdf datasheet:

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 1.393 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V250oContinuous Drain Current (TC=25 C ) 2.2IDAoContinuous Drain Current (TC=100 C )1.41IDM Drain Current-Pulsed 8.5 AO_VGS Gate-to-Source Voltage VEAS Single Pulsed Avalanche Energy 261 mJOIAR Avalanche Current 12.2 AOEAR Repetitive Avalanche Energy 12.5 mJOdv/dt Peak Diode Recovery dv/dt 3 4.8 V/ns OTotal Power Dissipation (TA=25 oC)*2.5 WPD Total Power Dissipation (TC=25 oC)25 Wo