Todos los transistores

 

irfr214b irfu214b.pdf datasheet:

irfr214b_irfu214birfr214b_irfu214b

November 2001IRFR214B / IRFU214B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.2A, 250V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.1 nC)planar, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters andswitch mode power supplies.DD

 

Keywords - ALL TRANSISTORS DATASHEET

 irfr214b irfu214b.pdf Design, MOSFET, Power

 irfr214b irfu214b.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfr214b irfu214b.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.