irg7p313u.pdf datasheet:

PD - 96409IRG7P313UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min330 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 20Al Optimized for Sustain and Energy Recovery 1.35 Vcircuits in PDP applicationsIRP max @ TC= 25C200 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lead Free packageCCECGGTO-247ACEIRG7P313UPbFn-channelG C EGate Collector EmitterDescriptionThis IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advancedtrench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panelefficiency. Additional features are 150C operating junction temperature and high repetitive peak currentcapability. These features combine to make this IGBT a hig