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irg7pa19u.pdf datasheet:

irg7pa19uirg7pa19u

PD-96357PDP TRENCH IGBTIRG7PA19UPbFFeaturesKey ParametersVCE min360 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 30A1.49 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C300 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lead Free package CCECGGETO-247ACn-channelGC EGate Collector EmitterDescriptionThis IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advancedtrench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panelefficiency. Additional features are 150C operating junction temperature and high repetitive peak currentcapability. These features combine to make this IGBT a highly efficient, ro

 

Keywords - ALL TRANSISTORS DATASHEET

 irg7pa19u.pdf Design, MOSFET, Power

 irg7pa19u.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irg7pa19u.pdf Database, Innovation, IC, Electricity

 

 
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