Todos los transistores

 

irg7pc28u.pdf datasheet:

irg7pc28uirg7pc28u

PD - 97723PDP TRENCH IGBTIRG7PC28UPbFKey ParametersFeaturesVCE min600 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 40A1.70 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C 225 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lead Free packageCCECG GETO-247ACn-channelG C EGate Collector EmitterDescriptionThis IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advancedtrench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panelefficiency. Additional features are 150C operating junction temperature and high repetitive peak currentcapability. These features combine to make this IGBT a highly efficient

 

Keywords - ALL TRANSISTORS DATASHEET

 irg7pc28u.pdf Design, MOSFET, Power

 irg7pc28u.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irg7pc28u.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.