irg7pg42ud.pdf datasheet:

IRG7PG42UDPbF IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR CVCES = 1000V Features Low VCE (ON) trench IGBT technology IC = 45A, TC = 100C Low switching losses G Square RBSOA TJ(MAX) = 150C 100% of the parts tested for ILM EVCE(ON) typ. = 1.7V @ IC = 30A Positive VCE (ON) temperature co-efficient n-channel Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-free package C C Benefits High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to low VCE(on) and low switching losses E E Rugged transient performance for increased reliability C G C G Excellent current sharing in parallel operation IRG7PG42UDPbF IRG7PG42UD-EPbF TO-247AC TO-247AD Applications U.P.