irg7ph42u-ep.pdf datasheet:

PD - 96233BIRG7PH42UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH42U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 60A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVCE(on) typ. = 1.7V Lead -Freen-channelBenefits High efficiency in a wide range of applicationsCC Suitable for a wide range of switching frequencies due tolow VCE (ON) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operationEECCGGApplications TO-247AC TO-247ADIRG7PH42UPbF IRG7PH42U-EP U.P.S WeldingG C E Solar inverterGate Collector Emitter Induction heat