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irg7ph46ud-e.pdf datasheet:

irg7ph46ud-eirg7ph46ud-e

IRG7PH46UDPbFIRG7PH46UD-EPINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 40A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diode Tight parameter distributionEVCE(on) typ. = 1.7V Lead-Freen-channelBenefits High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due toCClow VCE (ON) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operationEApplications ECCGG U.P.S.TO-247AC TO-247AD WeldingIRG7PH46UDPbF IRG7PH46UD-EP Solar InverterG C E Induction Hea

 

Keywords - ALL TRANSISTORS DATASHEET

 irg7ph46ud-e.pdf Design, MOSFET, Power

 irg7ph46ud-e.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irg7ph46ud-e.pdf Database, Innovation, IC, Electricity

 

 
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