irg7ph50u.pdf datasheet:

PD - 97549IRG7PH50UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH50U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 90A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVCE(on) typ. = 1.7V Lead -Freen-channelBenefits High efficiency in a wide range of applicationsCC Suitable for a wide range of switching frequencies due tolow VCE (ON) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operationEECCGGApplications TO-247AC TO-247ADIRG7PH50UPbF IRG7PH50U-EP U.P.S WeldingGC E Solar inverterGate Collector Emitter Induction heatin