irg7psh50ud.pdf datasheet:

PD - 97548IRG7PSH50UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 50A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diode Tight parameter distributionEVCE(on) typ. = 1.7V Lead-Freen-channelBenefits High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due tolow VCE (ON) and low switching lossesC Rugged transient performance for increased reliability Excellent current sharing in parallel operationECGApplications U.P.S.Super-247 Welding Solar Inverter Induction HeatingGC EGate Collector EmitterAbsolute Maximum Rati