irgp4630d.pdf datasheet:

IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode CVCES = 600V C C C C IC = 30A, TC =100C E E E GE C tSC 5s, TJ(max) = 175C C C C G G G G EIRGS4630DPbF IRGB4630DPbF IRGP4630D-EPbF IRGP4630DPbF VCE(ON) typ. = 1.65V @ IC = 18A TO-220AC TO-247AD n-channel D2Pak TO-247AC Applications G C E Appliance Drives Gate Collector Emitter Inverters UPS Features Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching Improved reliability due to rugged hard switching Square RBSOA and maximum junction temperature 175C performance and high power capability Positive VCE (ON) temperature coefficient and tight distribution Excellent current sharing in parallel operation of parameters 5s Short C