irgp4740d.pdf datasheet:

IRGP4740DPbF IRGP4740D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 40A, TC =100C tSC 5.5s, TJ(max) = 175C E E G C C G G VCE(ON) typ. = 1.7V @ IC = 24A EIRGP4740DPbF IRGP4740D-EPbF n-channelTO-247AC TO-247AD Applications Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters Welding Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 5.5s Short Circuit SOA Rugged Transient Performance Square RBSOA Maximum Junction Temperature 175C Increased ReliabilityPositive VCE (ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation Lead-Free, RoHs compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRGP474