irgp4760d.pdf datasheet:

IRGP4760DPbF IRGP4760D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 60A, TC =100C tSC 5.5s, TJ(max) = 175C G E E C C G G EVCE(ON) typ. = 1.7V @ IC = 48A IRGP4760DPbFIRGP4760DEPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collector Emitter UPS Solar Inverters Welding Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 5.5s Short Circuit SOA Rugged Transient Performance Square RBSOA Maximum Junction Temperature 175C Increased ReliabilityPositive VCE (ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation Lead-Free, RoHs compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Qua