irgsl4b60k.pdf datasheet:

PD - 94633AIRGB4B60KIRGS4B60KIRGSL4B60KINSULATED GATE BIPOLAR TRANSISTORFeaturesCVCES = 600V Low VCE (on) Non Punch Through IGBT Technology. 10s Short Circuit Capability.IC = 6.8A, TC=100C Square RBSOA. Positive VCE (on) Temperature Coefficient.G Maximum Junction Temperature rated at 175C. tsc > 10s, TJ=150CEVCE(on) typ. = 2.1VBenefitsn-channel Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation.TO-220 D2Pak TO-262IRGB4B60K IRGS4B60K IRGSL4B60KAbsolute Maximum RatingsParameter Max. UnitsVCES Collector-to-Emitter Voltage 600 VIC @ TC = 25C Continuous Collector Current 12IC @ TC = 100C Continuous Collector Current 6.8 AICM Pulse Collector Current (Ref.Fig.C.T.5) 24Clamped Inductive Load current ILM 24VGE Gat