irgsl8b60k.pdf datasheet:

PD - 94545CIRGB8B60KIRGS8B60KINSULATED GATE BIPOLAR TRANSISTORIRGSL8B60KCFeaturesVCES = 600V Low VCE (on) Non Punch Through IGBT Technology. 10s Short Circuit Capability.IC = 20A, TC=100C Square RBSOA. Positive VCE (on) Temperature Coefficient. Gtsc>10s, TJ=150CEVCE(on) typ. = 1.8Vn-channelBenefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation.TO-220AB D2Pak TO-262IRGB8B60K IRGS8B60K IRGSL8B60KAbsolute Maximum RatingsParameter Max. UnitsVCES Collector-to-Emitter Voltage 600 VIC @ TC = 25C Continuous Collector Current 28IC @ TC = 100C Continuous Collector Current 19 AICM Pulse Collector Current (Ref.Fig.C.T.5) 56Clamped Inductive Load current ILM 56VGE Gate-to-Emitter Voltage 20 VPD @ TC = 25C Maximum