ixfr24n50 ixfr26n50.pdf datasheet:

Advanced Technical InformationVDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 26N50 500 V 24 A 0.20 WISOPLUS247TMIXFR 24N50 500 V 22 A 0.23 W(Electrically Isolated Back Surface)trr 250 nsN-Channel Enhancement ModeHigh dV/dt, Low trr, HDMOSTM FamilyISOPLUS 247TMSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 500 VGVGS Continuous 20 VDVGSM Transient 30 VIsolated back surface*ID25 TC = 25C 26N50 26 A24N50 24 AG = Gate D = DrainIDM TC = 25C, Pulse width limited by TJM 26N50 104 AS = Source24N50 96 AIAR TC = 25C 26N50 26 A* Patent pending24N50 24 AEAR TC = 25C30 mJdv/dt IS IDM, di/dt 100 A/ms, VDD VDSS 5 V/nsTJ 150C, RG = 2 WFeaturesPD TC = 25C 250 W Silicon chip on Direct-Copper-BondsubstrateTJ -55 ... +150 C- High power dissi