ixfr44n60.pdf datasheet:

HiPerFETTM Power MOSFETsIXFR 44N60 VDSS = 600 VISOPLUS247TMID25 = 38 A(Electrically Isolated Back Surface)RDS(on)= 130 mWSingle MOSFET Dietrr 250 nsISOPLUS 247TMSymbol Test Conditions Maximum Ratings E153432VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 MW 600 VVGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C38 AG = Gate D = DrainIDM TC = 25C, Note 1 60 AS = SourceIAR TC = 25C44 A* Patent pendingEAR TC = 25C60 mJEAS TC = 25C3 Jdv/dt IS IDM, di/dt 100 A/ms, VDD VDSS 5 V/nsTJ 150C, RG = 2 WFeaturesPD TC = 25C 400 W Silicon chip on Direct-Copper-BondTJ -55 ... +150 CsubstrateTJM 150 C- High power dissipationTstg -55 ... +150 C- Isolated mounting surface- 2500V electrical isolationTL 1.6 mm (0.063 in.) from case for 10 s 300 C Low drain to tab capaci