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ixgh24n60b.pdf datasheet:

ixgh24n60bixgh24n60b

IXGH 24N60B VCES = 600 VHiPerFASTTM IGBTIC25 = 48 AVCE(sat) = 2.3 Vtfi = 80 nsPreliminary DataTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GIC25 TC = 25C48 ACEIC90 TC = 90C24 AG = Gate, C = Collector,ICM TC = 25C, 1 ms 96 AE = Emitter, TAB = CollectorSSOA VGE = 15 V, TVJ = 125C, RG = 22 ICM = 48 A(RBSOA) Clamped inductive load @ 0.8 VCESFeaturesPC TC = 25C 150 WTJ -55 ... +150 C International standard packagesJEDEC TO-247 SMD surfaceTJM 150 Cmountable and JEDEC TO-247 ADTstg -55 ... +150 C High frequency IGBTMaximum lead temperature for soldering 300 C High current handling capability1.6 mm (0.062 in.) from case for 10 s 3rd generation HDMOSTM process MO

 

Keywords - ALL TRANSISTORS DATASHEET

 ixgh24n60b.pdf Design, MOSFET, Power

 ixgh24n60b.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixgh24n60b.pdf Database, Innovation, IC, Electricity

 

 
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