Todos los transistores

 

ixgk64n60b3d1.pdf datasheet:

ixgk64n60b3d1ixgk64n60b3d1

VCES = 600VGenX3TM 600V IGBTIXGK64N60B3D1IC110 = 64Awith DiodeIXGX64N60B3D1VCE(sat) 1.8VMedium speed low Vsat PT tfi(typ) = 88nsIGBTs 5-40 kHz switchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 V C (TAB)EVGEM Transient 30 VIC110 TC = 110C64 APLUS247 (IXGX)ICM TC = 25C, 1ms 400 ASSOA VGE = 15V, TVJ = 125C, RG = 3 ICM = 200 A(RBSOA) Clamped inductive load @ VCE 600VPC TC = 25C 460 WGGDCTABESTJ -55 ... +150 CTJM 150 CG = Gate C = CollectorTstg -55 ... +150 CE = Emitter TAB = CollectorMd Mounting torque (TO-264) 1.13 / 10 Nm/lb.in.FC Mounting force (PLUS247) 20..120 / 4.5..27 N/lb.FeaturesTL Maximum lead temperature for soldering 300 C TSOLD 1.6mm (0.062 in.

 

Keywords - ALL TRANSISTORS DATASHEET

 ixgk64n60b3d1.pdf Design, MOSFET, Power

 ixgk64n60b3d1.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixgk64n60b3d1.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.