ixgr64n60a3.pdf datasheet:

Preliminary Technical InformationVCES = 600VGenX3TM 600V IGBTIXGR64N60A3IC110 = 47AVCE(sat) 1.35VUltra-low Vsat PT IGBTs forup to 5kHz switchingISOPLUS247TM (IXGR)Symbol Test Conditions Maximum RatingsE153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGIC110 TC = 110C 47 A Isolated TabCEICM TC = 25C, 1ms 350 ASSOA VGE= 15V, TVJ = 125C, RG = 3 ICM = 100 A (RBSOA) Clamped inductive load @ VCE 600V G = Gate E = EmitterPC TC = 25C 200 WC = CollectorTJ -55 ... +150 CTJM 150 CTstg -55 ... +150 CFeaturesFC Mounting Force 20..120/4.5..27 N/lb. Silicon chip on Direct-Copper BondTL 1.6mm (0.063 in.) from case for 10s 300 C (DCB) substrate Isolated mounting surfaceTSOLD Plastic body for