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ixgt64n60a3.pdf datasheet:

ixgt64n60a3ixgt64n60a3

Preliminary Technical InformationIXGH64N60A3 VCES = 600VGenX3TM 600V IGBTIXGT64N60A3IC110 = 64AUltra-lowVsat PT IGBTs for up toVCE(sat) 1.35V5 kHz switchingSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGC (TAB)CIC110 TC = 110C 64 AEICM TC = 25C, 1ms 400 ASSOA VGE = 15V, TVJ = 125C, RG = 3 ICM = 100 A TO-268 (IXGT)(RBSOA) Clamped inductive load @ 600VPC TC = 25C 460 WGETJ -55 ... +150 CTJM C C (TAB)150Tstg -55 ... +150 CG = Gate C = CollectorTL 1.6mm (0.062 in.) from case for 10s 300 CE = Emitter TAB = CollectorTSOLD Plastic body for 10 seconds C260Md Mounting torque (TO-247) 1.13/10 Nm/lb.in.FeaturesWeight TO-247 6 g TO-268 5 gOptimized fo

 

Keywords - ALL TRANSISTORS DATASHEET

 ixgt64n60a3.pdf Design, MOSFET, Power

 ixgt64n60a3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixgt64n60a3.pdf Database, Innovation, IC, Electricity

 

 
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