ixta14n60p ixtq14n60p ixtp14n60p.pdf datasheet:

IXTA 14N60P VDSS = 600 VPolarHVTMIXTP 14N60P ID25 = 14 APower MOSFET IXTQ 14N60P RDS(on) 550 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VGVGS Continuous 30 V S(TAB)VGSM Tranisent 40 VID25 TC = 25C14 ATO-220 (IXTP)IDM TC = 25C, pulse width limited by TJM 42 AIAR TC = 25C14 AEAR TC = 25C25 mJ(TAB)GEAS TC = 25C 750 mJDSdv/dt IS IDM, di/dt 100 A/s, VDD VDSS, 10 V/nsTJ 150C, RG = 10 TO-3P (IXTQ)PD TC = 25C 300 WTJ -55 ... +150 CTJM 150 CTstg -55 ... +150 CGTL 1.6 mm (0.062 in.) from case for 10 s 300 CD(TAB)STSOLD Plastic body for 10 s 260 CMd Mounting torque (TO-3P,TO-220) 1.13/10 Nm/lb.in.G = Gate D = Drai