kgt15n60fda.pdf datasheet:

SEMICONDUCTORKGT15N60FDATECHNICAL DATAGeneral DescriptionKEC NPT Trench IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness as well as short circuit ruggedness.It is designed for hard switching applications.FEATURES High speed switchingHigh system efficiencyShort Circuit Withstand Times 5us(@TC=100)Extremely enhanced avalanche capabilityMAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCESCollector-Emitter Voltage 600 VVGES 20Gate-Emitter Voltage V15 A@Tc=25ICCollector Current7.5 A@Tc=100ICM*Pulsed Collector Current 30 AIFDiode Continuous Forward Current @Tc=2515 AIFM*Diode Maximum Forward Current 45 A41.6 W@Tc=25PDMaximum Power Dissipation17 W@Tc=100Tj*Repetitive rating : Pulse width limited by max. junction temperature 150Maximum Jun