kia4n60h.pdf datasheet:

4.0A600VN-CHANNELMOSFET4N60HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA4N60H N-Channel enhancement mode silicon gate power MOSFET is designed for highvoltage, high speed power switching applications such as switching regulators, switching converters,solenoid, motor drivers, relay drivers.2. Features R =2.3@V =10VDS(ON) GS Lowgate charge (typical 13.5nC) High ruggedness Fast switching capability Avalancheenergy specified Improveddv/dt capability3. PinconfigurationPin Function1 Gate2 Drain3 Source4 Drain1 of 6 Rev1.2Dec 20144.0A600VN-CHANNELMOSFET4N60HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS4. Absolutemaximumratings(T =25C, unless otherwise specified)CRatingParameter Symbol TO220 UnitsTO220F TO251 TO252TO262Drain-sourcevoltage V 600 VDSSGate-sourcevolta