mdf4n60bth.pdf datasheet:

MDF4N60B N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GSstate resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device for SMPS, high Speed switching and general purpose applications. Power Supply PFC High Current, High Speed Switching DGTO-220F MDF Series SAbsolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS 30 V TC=25oC 4.6* A Continuous Drain Current ID TC=100oC 2.9* A Pulsed Drain Current(1) IDM 18.4* A TC=25oC 34.7 W Power Dissipation PD Derate above 25 oC 0.28 W/ oC Repe