mdfs10n60dth.pdf datasheet:

MDFS10N60D N-Channel MOSFET 600V, 10A, 0.75General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChips MOSFET Technology, which provides low on- ID = 10A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.75 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed switching and general purpose applications. Power Supply PFC High Current, High Speed Switching DGTO-220FS MDFS Series SAbsolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS 30 V TC=25oC 10.0* A Continuous Drain Current ID TC=100oC 6.33* A Pulsed Drain Current(1) IDM 40* A TC=25oC 48.6 W Power Dissipation PD Derate above 25 oC 0.39 W/ oC Repetitive Avalanche Energy(1)