mgd623s.pdf datasheet:

IGBT MGD623S July, 2009 Features Package----TO-3P Low Saturation Voltage VCE(sat)=1.8V typ. High Speed tf=120ns typ. Low VF FRD Included VF=1.2V typ. Applications Current Resonance Inverter Switching Induction Heating Cooking Equivalent circuit C (2) G (1) E (3) Absolute maximum ratings (Ta=25C) Characteristic Symbol Rating UnitCollector to Emitter Voltage VCES 600 V Gate to Emitter Voltage VGES 30 V Continuous Collector Current IC 50 A Pulsed Collector Current IC(pulse) 1) 100 ADiode Continuous Forward Current IF 30 A Diode pulsed Forward Current IF(pulse) 1) 60 AMaximum Power Dissipation PC 150 (Tc=25C) W Thermal Resistance IGBT j-c IGBT 0.833 C /W Thermal Resistance Di j-c Di 1.67 C /W Junction Temperature Tj 150 C Storage Temperature Tstg -55 to 150 C 1) PW1ms, Duty cycle