mgp15n60urev0.pdf datasheet:

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP15N60U/DProduct PreviewMGP15N60UInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high15 A @ 90Cvoltageblocking capability. It also provides fast switching charac-26 A @ 25Cteristics and results in efficient operation at high frequencies.600 VOLTS Industry Standard TO220 Package VERY LOW High Speed Eoff: 67 mJ/A typical at 125C ONVOLTAGE Low OnVoltage 1.7 V typical at 8.0 A, 125C Robust High Voltage Termination ESD Protection GateEmitter Zener DiodesCG GCECASE 221A09, Style 9ETO220ABMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Rating Symbol Value UnitCollec