mgp4n60erev0.pdf datasheet:

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP4N60E/DDesigner's Data SheetMGP4N60EInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high4.0 A @ 90Cvoltageblocking capability. Its new 600 V IGBT technology is6.0 A @ 25Cspecifically suited for applications requiring both a high tempera-600 VOLTSture short circuit capability and a low VCE(on). It also provides fastSHORT CIRCUIT RATEDswitching characteristics and results in efficient operation at highLOW ONVOLTAGEfrequencies. This new Eseries introduces an Energyefficient,ESD protected, and short circuit rugged device. Industry Standard TO220 Package High Speed: Eoff = 55 mJ/A typical at 125C