mje13003b.pdf datasheet:

WEITRONMJE13003BHigh Voltage Fast-switchingCOLLECTOR2.NPN Power TransistorP b Lead(Pb)-Free1. EMITTER3.2. COLLECTORBASE3. BASEDESCRIPTION:1.The device is manufactured using high voltageEMITTERTO-92Multi Epitaxial Planar technology for high switchingspeeds and medium voltage capability.It uses a Cellular Emitter structure with planar edgetermination to enhance switching speeds whilemaintaining the wide RBSOA.The MJE13003B is designed for use in compact fluorescentlamp application.FEATURE:* Medium Voltage Capability* Low Spread Of Dynamic Parameters* Minimum Lot-to-lot Spread For Reliable Operation* Very High Switching SpeedAPPLICATIONS:* Electronic Ballasts For Fluorescent LightingABSOLUTE MAXIMUM RATINGSParameter Symbol Value UnitCollector-Emitter Voltage (VBE = 0) VCES 700 VCollector-Emitter Voltage (IB = 0) VCEO 400