mje13003di3.pdf datasheet:

MJE13003DI3(3DD13003DI3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 800 V CBO V 480 V CEO V 9.0 V EBO I 1.5 A C P (Ta=25) 1.25 W CP (T =25) 30 W CCT 150 j T -55150 stg /Electrical characteristics(Ta=25) Rating Symbol Test condition Unit Min Typ Max V I =1mA I =0 800 V CBO C EV I =10mA I =0 480 V CEO C BV I =1mA I =0 9.0 V EBO E CI V =800V I =0 0.1 mA CBO CB EI V =480V I =0 0.1 mA CEO CE BI V =9.