mje340.pdf datasheet:

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTOR MJE340TO126 Plastic PackageECBFor use in High Voltage General Purpose ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage VCEO 300 VCollector Base Voltage VCBO 300 VVEBOEmitter Base Voltage 3.0 VICCollector Current Continuous 500 mAPower Dissipation @ Ta=25C PD 1.25 WDerate above 25C 10 mW/CPower Dissipation @ Tc=25C PD 20 WDerate above 25C 0.16 W/COperating And Storage Junction Tj, Tstg - 65 to +150 CTemperature RangeTHERMAL CHARACTERISTICSJunction to Ambient in free air Rth (j-a)100 C/WJunction to Case Rth (j-c)6.25 C/WELECTRICAL CHARACTERISTICS (Tc=25C unless specified otherwise)DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT*VCEO (sus) I

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