mmbt2222a.pdf datasheet:

Spec. No. : C203N3 Issued Date : 2002.05.11 CYStech Electronics Corp.Revised Date : 2010.11.12 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor MMBT2222ADescription The MMBT2222A is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.2V at I /I = 500mA/50mA. CE(sat) CE(sat) C BOptimal for low Voltage operation. Complementary to MMBT2907A. Pb-free package Symbol Outline MMBT2222A SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits UnitCollector-Base Voltage VCBO 75 VCollector-Emitter Voltage VCEO 50 VEmitter-Base Voltage VEBO 6 VCollector Current IC 0.6 APower Dissipation (TA=25C) PD 225 (Note) mWPower Dissipation (TC=25C) PD 560 mWThermal Resistan