mmbt2907a-g.pdf datasheet:

General Purpose TransistorMMBT2907A-G (PNP)RoHS DeviceFeaturesSOT-23 -Epitaxial planar die construction -Device is designed as a general purpose0.118(3.00)0.110(2.80)amplifier and switching.3 -Useful dynamic range exceeds to 600mA0.055(1.40)0.047(1.20) As a switch and to 100MHz as an amplifier.1 20.079(2.00)0.071(1.80)0.006(0.15)0.003(0.08)0.041(1.05)0.100(2.55)Collector0.035(0.90)3 0.089(2.25)1 0.004(0.10) maxBase0.020(0.50)0.020(0.50) 0.012(0.30)0.012(0.30) 2EmitterDimensions in inches and (millimeter)Maximum Ratings (at Ta=25C unless otherwise noted)Parameter Symbol Value UnitsCollector-Base voltageVCBO -60 VCollector-Emitter voltageVCEO -60 VEmitter-Base voltageVEBO -5 VCollector current-continuous IC -600 mATotal device dissipationPD 250 mWThermal resistance, junction to ambientRJA 500