mmbt2907a-l mmbt2907a-h.pdf datasheet:

Jingdao Microelectronics co.LTD MMBT2907AMMBT2907ASOT-23PNP TRANSISTOR3FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO -60 V2.EMITTER3.COLLECTORCollectorEmitter Voltage VCEO -60 VEmitterBase Voltage VEBO -5 VCollector Current Continuous IC -600 mAmWTotal Device Dissipation PD 250Thermal Resistance From JunctionRthJA 500 /W To AmbientOperation Junction and Storage TJ,Tstg -55~+150Temperature RangeELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.)Parameter Symbol Test conditions Typ Max UnitMin V(BR)CBO IC =-10uA, IE = 0Collector-base breakdown voltage -60 V V(BR)CEOCollector-em

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