mmbt3906lt1-d.pdf datasheet:

MMBT3906LT1GGeneral Purpose TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -40 Vdc2Collector-Base Voltage VCBO -40 VdcEMITTEREmitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -200 mAdc3Collector Current - Peak (Note 3) ICM -800 mAdc1THERMAL CHARACTERISTICS2Characteristic Symbol Max UnitTotal Device Dissipation FR- 5 Board PDSOT-23 (TO-236)(Note 1) @ TA = 25C 225 mWCASE 318Derate above 25C 1.8 mW/CSTYLE 6Thermal Resistance, Junction-to-Ambient RqJA 556 C/WMARKING DIAGRAMTotal Device Dissipation Alumina PDSubstrate, (Note 2) @ TA = 25C 300 mWDerate above 25C 2.4 mW/CThermal Resistance, Junction-to-Ambient RqJA 417 C/W2A M G