mmbta55l mmbta56.pdf datasheet:

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA55LT1/DDriver TransistorsMMBTA55LT1COLLECTORPNP Silicon3MMBTA56LT1**Motorola Preferred Device1BASE2EMITTERMAXIMUM RATINGS3Rating Symbol MMBTA55 MMBTA56 Unit1CollectorEmitter Voltage VCEO 60 80 Vdc2CollectorBase Voltage VCBO 60 80 VdcEmitterBase Voltage VEBO 4.0 VdcCASE 31808, STYLE 6Collector Current Continuous IC 500 mAdcSOT23 (TO236AB)DEVICE MARKINGMMBTA55LT1 = 2H; MMBTA56LT1 = 2GMTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FR5 Board,(1) PD 225 mWTA = 25CDerate above 25C 1.8 mW/CThermal Resistance, Junction to Ambient RqJA 556 C/WTotal Device Dissipation PD 300 mWAlumina Substrate,(2) TA = 25CDerate above 25C 2.4 mW/CThermal Resistance, Junction to Ambient Rq

Keywords - ALL TRANSISTORS DATASHEET

 mmbta55l mmbta56.pdf Design, MOSFET, Power

 mmbta55l mmbta56.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mmbta55l mmbta56.pdf Database, Innovation, IC, Electricity