mmbta56.pdf datasheet:

MMBTA56 PNP General Purpose Transistor for amplifier applications On special request, these transistors can be manufactured in different pin configurations. TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 80 VCollector Emitter Voltage -VCES 80 VEmitter Base Voltage -VEBO 4 VCollector Current -IC 500 mAPower Dissipation Ptot 200 mWOThermal Resistance, Junction to Ambient RJA 357 C/W OJunction Temperature Tj -55 to +150 C OStorage Temperature Range TStg -55 to +150 C SEMTECH ELECTRONICS LTD. Dated: 16/03/2015 Rev: 01 MMBTA56 OCharacteristics at Ta=25 C Parameter Symbol Min. Max. UnitDC Current Gain at -IC = 10 mA, -VCE = 1 V hFE 100 - - at -IC = 100 mA, -VCE = 1 V hFE 100 - - Collector Cutoff Current -ICBO - 100 nAat -VCB = 80 V Collector Cutoff