mmbta56.pdf datasheet:

UNISONIC TECHNOLOGIES CO., LTD MMBTA56 PNP SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3* Collector-Emitter Voltage: VCEO=-80V * Collector Dissipation: PD=350mW 12SOT-23 ORDERING INFORMATION Ordering Number Pin AssignmentPackage Packing Lead Free Halogen Free 1 2 3MMBTA56L-AE3-R MMBTA56G-AE3-R SOT-23 E B C Tape Reel MARKING www.unisonic.com.tw 1 of 5 Copyright 2005 Unisonic Technologies Co., Ltd QW-R206-090,B MMBTA56 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25) PARAMETER SYMBOL RATINGS UNITCollector-Base Voltage VCBO -80 VCollector-Emitter Voltage VCEO -80 VEmitter-Base Voltage VEBO -4 VCollector Current - Continuous IC -500 mATotal Device Dissipation(Note 1) 350 mW PD Derate Above 25 2.8 mW/Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note 1. Device mounted on FR