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mmbta92-g.pdf datasheet:

mmbta92-gmmbta92-g

General Purpose TransistorMMBTA92-G (PNP)RoHS DeviceFeaturesSOT-230.119(3.00) -High voltage transistor.0.110(2.80)30.056(1.40)0.047(1.20)Diagram:1 20.079(2.00)Collector0.071(1.80)30.006(0.15)0.003(0.08)10.041(1.05) 0.100(2.550)Base0.035(0.90) 0.089(2.250)20.004(0.10) maxEmitter0.020(0.50)0.020(0.50) 0.012(0.30)0.012(0.30) Dimensions in inches and (millimeter)Maximum Ratings (at TA=25C unless otherwise noted)SymbolParameter Value UnitCollector-Base voltageVCBO -300 VCollector-Emitter voltageVCEO -300 VEmitter-Base voltageVEBO -5 VCollector current-Continuous IC -200 mACollector current-pulsed ICM -500 mACollector power dissipationPC 300 mWThermal resistance, junction to ambientRJA 410 C/WJunction temperatureTJ 150 CStorage temperature TSTG -55 to +150 CElectrical Characteristics

 

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 mmbta92-g.pdf Design, MOSFET, Power

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