mmbta92-ms.pdf datasheet:

www.msksemi.comMMBTA92-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (PNP) FEATURES High voltage transistor 1. BASE2. EMITTERSOT23 MARKING:2D3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200 mA Pulsed ICM Collector Current -Pulsed mA PC Collector Power Dissipation 300 mW TJ,Tstg Operation Junction and Storage Temperature Range -55-150 RJA Thermal Resistance From Junction To Ambient 417 /W ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Uniax Collector-base breakdown voltage V(BR)CBO -300 VIC= -100A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -3