mmbtsc3356.pdf datasheet:

MMBTSC3356 NPN Silicon Epitaxial Planar Transistorfor microwave low noise amplifier at VHF,UHF and CATV bandThe transistor is subdivided into threegroups, Q, R and S, according to its DCcurrent gain.1.Base 2.Emitter 3.CollectorHFE MARKINGSOT-23 Plastic PackageQ R23R R24S R25OAbsolute Maximum Ratings (T = 25 C)aParameter Symbol Value UnitCollector Base Voltage VCBO 20 VCollector Emitter Voltage VCEO 12 VEmitter Base Voltage VEBO 3 VCollector Current I 100 mACPower Dissipation Ptot 200 mWOJunction Temperature T 150 CjOStorage Temperature Range T - 65 to + 150 CSOCharacteristics (T = 25 C)aParameter Symbol Min. Typ. Max. UnitDC Current Gainat V = 10 V, I = 20 mA Current Gain Group Q hFE 50 - 100 -CE CR hFE 80 - 160 -S hFE 125 - 250 -Collector Cutoff CurrentICBO - - 1 Aat V = 10 VCBEmitter Cutoff Current