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mmbtsc3875-o mmbtsc3875-y mmbtsc3875-g mmbtsc3875-l.pdf datasheet:

mmbtsc3875-o_mmbtsc3875-y_mmbtsc3875-g_mmbtsc3875-lmmbtsc3875-o_mmbtsc3875-y_mmbtsc3875-g_mmbtsc3875-l

MMBTSC3875NPN Transistor Features For Switching and AF Amplifier Applications.SOT-23 As Complementary Type of the PNP Transistor (TO-236) MMBTSA1504 is Recommended.1.Base 2.Emitter 3.CollectorMarking:MMBTSC3875O:ALOMMBTSC3875Y:ALYMMBTSC3875G:ALGMMBTSC3875L:ALLAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBOCollector Emitter Voltage V 50 V CEOEmitter Base Voltage V 5 V EBOCollector Current I 150 mA CPower Dissipation P 150 mW D Junction Temperature T 150 J Storage Temperature Range T -55 to 150 STGwww.pingjingsemi.com 1 / 4Revision1.0 Mar-2019MMBTSC3875 NPN Transistor Electrical Characteristics Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Min. Typ. Max. Uni

 

Keywords - ALL TRANSISTORS DATASHEET

 mmbtsc3875-o mmbtsc3875-y mmbtsc3875-g mmbtsc3875-l.pdf Design, MOSFET, Power

 mmbtsc3875-o mmbtsc3875-y mmbtsc3875-g mmbtsc3875-l.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mmbtsc3875-o mmbtsc3875-y mmbtsc3875-g mmbtsc3875-l.pdf Database, Innovation, IC, Electricity

 

 
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