mmd60r360p.pdf datasheet:

isc N-Channel MOSFET Transistor MMD60R360PFEATURESStatic drain-source on-resistance:RDS(on)0.38100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage 30 VGSI Drain Current-Continuous 11 ADI Drain Current-Single Pulsed 33 ADMP Total Dissipation @T =25 83 WD CMax. Operating Junction Temperature 150 TjT Storage Temperature -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 1.51isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc N-Channel MOSFET Transistor MMD60R360PELECTRICAL CHARACTERISTICST =25 unless otherwise spec

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