mmix4b12n300.pdf datasheet:

Preliminary Technical InformationHigh Voltage, High GainMMIX4B12N300 VCES = 3000VBIMOSFETTM MonolithicIC110 = 11ABipolar MOS TransistorVCE(sat) 3.2VC2C1G1G2(Electrically Isolated Tab)E2C4 E1C3G3 G4C2G2E3E4E2C4G4E3E4C1G1E1C3Symbol Test Conditions Maximum RatingsG3VCES TC = 25C to 150C 3000 V Isolated TabE3E4VCGR TJ = 25C to 150C, RGE = 1M 3000 VG4E2C4VGES Continuous 20 VG2VGEM Transient 30 V C2G3IC25 TC = 25C 26 AE1C3G1IC110 TC = 110C 11 AC1ICM TC = 25C, VGE = 19V, 1ms 98 A10ms 52 AG = Gate E = EmitterSSOA VGE = 15V, TVJ = 125C, RG = 20 ICM = 98 A C = Collector(RBSOA) Clamped Inductive Load 1500 VFeaturesPC TC = 25C 125 WTJ -55 ... +150 C Silicon Chip on Direct-Copper BondTJM C150(DCB) Substrate Isolated Mounting Surface