msq4n60.pdf datasheet:

Bruckewell Technology Corp., Ltd. http://www.bruckewell-semicon.com/ Product Specification PRELIMINARY N-Channel Enhancement Mode Power MOSFET MSQ4N60 Description The MSQ4N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The QFN-5X6 package which has been designed to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). FEATURES: QFN 5X6 schematic diagram 4.5A, 600V, RDS(on) = 2.50 @VGS = 10 V Low gate charge ( typical 16nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability APPLICATION: Ballast Inverter Switching applications Absolute Maximum Ratings Absolute Maximum Ratings (Tc=25C unless oth