msw20n50.pdf datasheet:

MSW20N50 500V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features RDS(on) (Typical 0.26 )@VGS=10V Gate Charge (Typical 90nC) Improved dv/dt Capability, High Ruggedness 100% EAS Test Extended Safe Operating Area RoHS compliant package Application High current, High speed switching PFC (Power Factor Correction) SMPS (Switched Mode Power Supplies) Graphic symbol Packing & Order Information 50/Tube ; 1,000/Box MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage 500 V 30 VGS Gate-Source Voltage V 20 A