msw20n60.pdf datasheet:

Preliminary MSW20N60 500V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features RDS(on) (Typical 0.26 )@VGS=10V Gate Charge (Typical 80nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C) RoHS compliant package Packing & Order Information 30/Tube ; 540/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25C unless otherwise noted) Symbol Parameter Value Unit VDSS Drain-Source Voltage 600 V 30 VGS Gate-Source Voltage V 20 A Drain Current -Continuous (TC=25C) ID 12 A Drain Current -Continuous (TC=100C) IDM D